UnitedSiC SiC FETs
UnitedSiC SiC FETs are UJ3C and UF3C series of silicon carbide FETs that are based on a unique cascode configuration. The configuration in which a high-performance SiC fast JFET is co-packaged with a cascode optimized Si MOSFET to produce the only standard gate drive SiC device in the market today. The SiC FETs offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings.
Features
27mΩ to 150mΩ on-resistance range (typical RDS(on))175°C maximum operating temperatureExcellent reverse recovery
Applications
EV chargingPV invertersSwitch mode power supplies
Unitedsic Newest
United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
Date: 2018-10-29United Silicon Carbide UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V.
Date: 2018-10-29UnitedSiC SiC FETs are UJ3C and UF3C series of silicon carbide FETs that are based on a unique cascode configuration. Now Available at Mouser.
Date: 2018-08-13UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of SiC superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF).
Date: 2018-04-26
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