NXP Semiconductors MRF24G300HS-2450 Reference Design

Author : Nxp semiconductors Published Time : 2019-07-22
NXP Semiconductor MRF24G300HS-2450 Reference Design is configured to evaluate the operation of the MRF24G300HS. The MRF24G300HS is a 2400-2500MHz, 330W GaN-on-SiC RF Power Transistor with pre-match input, no output match, and available in a NI-780 air cavity ceramic package. The MRF24G300HS is designed for both CW and long pulse (cycling) reliability, as well as exceeding the efficiency of magnetrons.

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NXP Semiconductor MRF24G300HS-2450 Reference Design is configured to evaluate the operation of the MRF24G300HS a 2400-2500MHz, 330W GaN-on-SiC RF Power Transistor.

Date: 2019-07-22