DDR4, K4A8G085WB-BITD, K4A8G085WC-BCPB, 2

Phần chính # / Nhà sản xuất	Mô tả / PDF	Số lượng / RFQ
K4A8G085WB-BIRC Samsung Semiconductor	8 Gb 1G x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.	21766chiếc
K4A8G085WB-BITD Samsung Semiconductor	8 Gb 1G x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.	19189chiếc
K4A8G085WC-BCPB Samsung Semiconductor	8 Gb 1G x 8 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	16597chiếc
K4A8G085WC-BCRC Samsung Semiconductor	8 Gb 1G x 8 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	24489chiếc
K4A8G085WC-BCTD Samsung Semiconductor	8 Gb 1G x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	19231chiếc
K4A8G085WC-BCWE Samsung Semiconductor	8 Gb 1G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.	21766chiếc
K4A8G085WC-BITD Samsung Semiconductor	8 Gb 1G x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.	23945chiếc
K4A8G085WC-BIWE Samsung Semiconductor	8 Gb 1G x 8 3200 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.	14142chiếc
K4A8G165WB-BCPB Samsung Semiconductor	8 Gb 512M x 16 2133 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	24170chiếc
K4A8G165WB-BCRC Samsung Semiconductor	8 Gb 512M x 16 2400 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	25018chiếc
K4A8G165WB-BCTD Samsung Semiconductor	8 Gb 512M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	25398chiếc
K4A8G165WB-BCWE Samsung Semiconductor	8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	24756chiếc
K4A8G165WB-BIRC Samsung Semiconductor	8 Gb 512M x 16 2400 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.	20416chiếc
K4A8G165WB-BITD Samsung Semiconductor	8 Gb 512M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.	26874chiếc
K4A8G165WB-BIWE Samsung Semiconductor	8 Gb 512M x 16 3200 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.	19714chiếc
K4A8G165WC-BCPB Samsung Semiconductor	8 Gb 512M x 16 2133 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	17010chiếc
K4A8G165WC-BCRC Samsung Semiconductor	8 Gb 512M x 16 2400 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	24976chiếc
K4A8G165WC-BCTD Samsung Semiconductor	8 Gb 512M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	20430chiếc
K4A8G165WC-BCWE Samsung Semiconductor	8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.	26293chiếc
K4A8G165WC-BITD Samsung Semiconductor	8 Gb 512M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.	16752chiếc

DDR4

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